AO4410 symbol v ds v gs i dm t j , t stg symbol ty p max 31 40 59 75 r jl 16 24 w junction and storage temperature range a p d c 3 2.1 -55 to 150 t a =70c i d continuous drain current a maximum units parameter t a =25c t a =70c 30 maximum junction-to-ambient a steady-state 18 15 80 c/w absolute maximum ratings t a =25c unless otherwise noted v v 12 pulsed drain current b power dissipation t a =25c gate-source voltage drain-source voltage maximum junction-to-lead c steady-state c/w thermal characteristics parameter units maximum junction-to-ambient a t 10s r ja c/w features v ds (v) = 30v i d = 18a (v gs = 10v) r ds(on) < 5.5m ? (v gs = 10v) r ds(on) < 6.2m ? (v gs = 4.5v) the AO4410 uses advanced trench technology to provide excellent r ds(on) , shoot-through immunity, body diode characteristics and ultra-low gate resistance. this device is ideally suited for use as a low side switch in notebook cpu core power conversion. standard product AO4410 is pb-free (meets rohs & sony 259 specifications). AO4410l is a green product ordering option. AO4410 and a o4410l are electrically identical. soic-8 g s s s d d d d g d s n-channel enhancement mode field general description effect transistor www.freescale.net.cn 1 / 4
AO4410 symbol min typ max units bv dss 30 v 0.005 1 t j =55c 5 i gss 100 na v gs(th) 0.8 1.1 1.5 v i d(on) 80 a 4.7 5.5 t j =125c 6.4 7.4 5.2 6.2 m ? g fs 102 s v sd 0.64 1 v i s 4.5 a c iss 9130 10500 pf c oss 625 pf c rss 387 pf r g 0.4 0.5 ? q g (4.5v) 72.4 85 nc q gs 13.4 nc q gd 16.8 nc t d(on) 11 15 ns t r 711ns t d(off) 99 135 ns t f 13 19.5 ns t rr 33 40 ns q rr 22.2 30 nc this product has been designed and qualified for the consumer market. applications or uses as critical components in life support devices or systems are not authorized. aos does not assume any liability arising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. body diode reverse recovery time body diode reverse recovery charge i f =18a, di/dt=100a/ s drain-source breakdown voltage on state drain current i d =250 a, v gs =0v v gs =4.5v, v ds =5v v gs =10v, i d =18a reverse transfer capacitance i f =18a, di/dt=100a/ s electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions i dss a gate threshold voltage v ds =v gs i d =250 a v ds =24v, v gs =0v v ds =0v, v gs = 12v zero gate voltage drain current gate-body leakage current r ds(on) static drain-source on-resistance forward transconductance diode forward voltage maximum body-diode continuous current input capacitance output capacitance dynamic parameters m ? v gs =4.5v, i d =15a i s =1a,v gs =0v v ds =5v, i d =18a turn-on rise time turn-off delaytime v gs =10v, v ds =15v, r l =0.83 ? , r gen =3 ? turn-off fall time turn-on delaytime gate drain charge v gs =0v, v ds =15v, f=1mhz switching parameters total gate charge gate source charge gate resistance v gs =0v, v ds =0v, f=1mhz v gs =10v, v ds =15v, i d =18a a: the value of r ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the value in any given application depends on the user's specific board design. the current rating is based on the t 10s thermal resistance rating. b: repetitive rating, pulse width limited by junction temperature. c. the r ja is the sum of the thermal impedence from junction to lead r jl and lead to ambient. d. the static characteristics in figures 1 to 6 are obtained using 80 s pulses, duty cycle 0.5% max. e. these tests are performed with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the soa curve provides a single pulse rating. rev 4 : may 2005 www.freescale.net.cn 2 / 4
AO4410 typical electrical and thermal characteristics functions and reliability without notice. 0 10 20 30 40 50 60 012345 v ds (volts) fig 1: on-region characteristics i d (a) v gs =2v 2.5v 10v 0 10 20 30 40 50 60 0 0.5 1 1.5 2 2.5 v gs (volts) figure 2: transfer characteristics i d (a) 4.0 4.5 5.0 5.5 6.0 0 102030405060 i d (a) figure 3: on-resistance vs. drain current and gate voltage r ds(on) (m ? ) 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 0.0 0.2 0.4 0.6 0.8 1.0 v sd (volts) figure 6: body-diode characteristics i s (a) 25c 125c 0.8 1 1.2 1.4 1.6 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature normalized on-resistance v gs =10v v gs =4.5v 0 4 8 12 16 0246810 v gs (volts) figure 5: on-resistance vs. gate-source voltage r ds(on) (m ? ) 25c 125c v ds =5v v gs =4.5v v gs =10v i d =18a 25c 125c i d =18a www.freescale.net.cn 3 / 4
AO4410 typical electrical and thermal characteristics functions and reliability without notice. 0 1 2 3 4 5 0 102030405060708090 q g (nc) figure 7: gate-charge characteristics v gs (volts) 100 1000 10000 100000 0 5 10 15 20 25 30 v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss 0 20 40 60 80 100 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 10: single pulse power rating junction-to- ambient (note e) power (w) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 11: normalized maximum transient thermal impedance z ja normalized transient thermal resistance c oss c rss 0.1 1.0 10.0 100.0 0.1 1 10 100 v ds (volts) i d (amps) figure 9: maximum forward biased safe operating area (note e) 100 s 10ms 1m s 0.1s 1s 1 0s dc r ds(on) limited t j(max) =150c t a =25c v ds =15v i d =18a single pulse d=t on /t t j,pk =t a +p dm .z ja .r ja r ja =40c/w t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =150c t a =25c 10 s www.freescale.net.cn 4 / 4
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